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IEEE 256-1963

IEEE Test Procedure for Semiconductor Diodes
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IEEE 256-1963

IEEE Test Procedure for Semiconductor Diodes

PUBLISH DATE 1963
PAGES 10
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- Inactive-Withdrawn.
This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose of this Standard, a semiconductor diode is defined1 as: A semiconductor device having two terminals and exhibiting a nonlinear voltage--current characteristic; in more restricted usage, a semiconductor device which has the asymmetrical voltage--current characteristic exemplified by a single p-n junction. Methods of test are described for static, small-signal and pulse parameters. Many of the terms considered herein have been set down in AI E E and IRE Standards, particularly in 60 IRE 28.SH and AI EE No. 4252.
SDO IEEE: Institute of Electrical and Electronics Engineers
Document Number 256
Publication Date Dec. 20, 1963
Language en - English
Page Count 10
Revision Level
Supercedes
Committee
Publish Date Document Id Type View
Dec. 20, 1963 256-1963 Revision