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IEEE 759-1984

Current Revision
IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers
Best Price Guarantee Published: Dec 15, 1984 en - English 52 Pages
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IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers

PUBLISH DATE 1984
PAGES 52
New IEEE Standard - Inactive-Withdrawn. Test procedures for X-ray spectrometers consisting of a semiconductor radiation detector assembly and signal processing electronics interfaced to a pulse-height analyzer/computer are presented. Energy resolution, spectral distortion, pulse-height linearity, counting rate effects, overload effects, pulse-height stability, and efficiency are covered. Test procedures for pulse-height analyzers and computers are not covered.
This document presents standard test procedures for semiconductor X-ray energy spectrometers. Such systems consist of a semiconductor radiation detector assembly and signal processing electronics interfaced to a pulse height analyzer/computer. Test procedures for pulse-height analyzers and computers are not covered in this document. Section is essentially tutorial. This standard is not intended to imply that all tests described herein are mandatory, but only that such tests as are carried out shall be performed in accordance with the procedures described herein. Companion documents to this standard are ANSI/IEEE Std 300-1982 [1], ANSI/IEEE Std 301-1976 [2], and ANSI/IEEE Std 325-1971 [3]. The list of symbols and the glossary were derived from those in the companion documents. Contrary to previous convention in the X-ray spectroscopy field, this document utilizes the characteristic energy E of the X-ray rather than its wavelength λ. This approach is consistent with the fact that the basic quantity measured by this type of spectrometer is the X-ray energy. A convenient conversion is provided by the relationship λ(m) = 12.4 · 10-10 E-1(keV) λ(A0) = 12.4 E-1 (keV)

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