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ISO 23812:2009

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials
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ISO 23812:2009

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials

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ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

SDO ISO: International Organization for Standardization
Document Number ISO 23812
Publication Date Not Available
Language en - English
Page Count
Revision Level
Supercedes
Committee ISO/TC 201/SC 6
Publish Date Document Id Type View
Not Available ISO 23812:2009 Revision