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ISO 14706:2014

Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
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ISO 14706:2014

Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

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ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 Ă— 1010 atoms/cm2 to 1 Ă— 1014 atoms/cm2; contamination elements with atomic surface densities from 5 Ă— 108 atoms/cm2 to 5 Ă— 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

SDO ISO: International Organization for Standardization
Document Number ISO 14706
Publication Date Not Available
Language en - English
Page Count
Revision Level
Supercedes
Committee ISO/TC 201
Publish Date Document Id Type View
Not Available ISO 14706:2014 Revision