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BSI BS IEC 63068-1:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Classification of defects.
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BSI BS IEC 63068-1:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Classification of defects.

PUBLISH DATE 2019
PAGES 26
BSI BS IEC 63068-1:2019
Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power device
SDO BSI: British Standards Institution
Document Number BS IEC 63068-1
Publication Date May 10, 2019
Language en - English
Page Count 26
Revision Level
Supercedes
Committee
Publish Date Document Id Type View
May 10, 2019 BS IEC 63068-1:2019 Revision