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BSI BS IEC 62047-31:2019

Semiconductor devices. Micro-electromechanical devices. Four-point bending test method for interfacial adhesion energy of layered MEMS materials.
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BSI BS IEC 62047-31:2019

Semiconductor devices. Micro-electromechanical devices. Four-point bending test method for interfacial adhesion energy of layered MEMS materials.

PUBLISH DATE 2019
PAGES 14
BSI BS IEC 62047-31:2019
Four-point bending test method for interfacial adhesion energy of layered MEMS materials.
SDO BSI: British Standards Institution
Document Number BS IEC 62047-31
Publication Date April 17, 2019
Language en - English
Page Count 14
Revision Level
Supercedes
Committee
Publish Date Document Id Type View
April 17, 2019 BS IEC 62047-31:2019 Revision